BU2508DF DATASHEET PDF

BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

Author: Tygozragore Kegore
Country: Denmark
Language: English (Spanish)
Genre: Environment
Published (Last): 23 October 2009
Pages: 48
PDF File Size: 1.40 Mb
ePub File Size: 15.1 Mb
ISBN: 960-7-85070-777-3
Downloads: 84552
Price: Free* [*Free Regsitration Required]
Uploader: Mazukazahn

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

(PDF) BU2508DF Datasheet download

Bh2508df datasheet, equivalent, cross reference search. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Typical collector-emitter saturation voltage. July 2 Rev 1. This data sheet contains final product specifications. High collectorbase voltagevcbov high speed switching.

Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. Typical base-emitter saturation voltage. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

  DISTOMATOSIS PULMONAR PDF

BUDF datasheet, Pinout ,application circuits Isc Silicon NPN Power Transistor

Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack.

July 5 Rev 1. Typical DC current gain. Typical collector storage and fall time. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Dataasheet liability will be accepted by the publisher for any consequence of its use. July 6 Rev 1. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope.

Budf philips semiconductors, budf datasheet.

Stress above one or more of the limiting values may cause permanent damage to the device. Application information Where application information is given, it is advisory datashewt does not form part of the specification.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. July 1 Rev 1.

BU2508DF Datasheet, Equivalent, Cross Reference Search

Forward bias safe operating area. This data sheet contains target or goal specifications for product development. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. July 7 Rev 1.

  DESCARGAR ZALACAIN EL AVENTURERO PDF

Silicon diffused power transistor buaf datasheet catalog. Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications. C I Region of permissible DC operation. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

BUDF Datasheet(PDF) – NXP Semiconductors

Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet. Exposure to limiting values for extended periods may affect device reliability.

C 1 Turn-off current. II Extension for repetitive pulse operation. Budf transistor equivalent substitute crossreference search. Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml.

Refer to mounting instructions for F-pack envelopes. SOT; The seating plane is electrically isolated from all terminals.

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Buaf transistor equivalent substitute crossreference search.